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IPI110N20N3 - Power-Transistor

Download the IPI110N20N3 datasheet PDF. This datasheet also covers the IPI110N20N3G variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • N-channel, normal level.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.7 mW 88 A.
  • 175 °C operating temperature.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IPI110N20N3G-InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IPI110N20N3 N-Channel MOSFET INCHANGE
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IPI111N15N3G Power Transistor Infineon Technologies
IPI100N04S3-03 OptiMOS-T Power-Transistor Infineon Technologies

Other Datasheets by Infineon

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Full PDF Text Transcription

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IPB107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO263) ID 200 V 10.
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