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IPG20N06S4L-26 - Power Transistor

Features

  • Dual N-channel Logic Level - Enhancement mode.
  • AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPG20N06S4L-26 Product Summary VDS RDS(on),max4) ID 60 V 26 mW 20 A PG-TDSON-8 87 65 12 34 87 65 Type Package Marking IPG20N06S4L-26 PG-TDSON-8 4N06L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuou.

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Full PDF Text Transcription

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OptiMOS™-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPG20N06S4L-26 Product Summary VDS RDS(on),max4) ID 60 V 26 mW 20 A PG-TDSON-8 87 65 12 34 87 65 Type Package Marking IPG20N06S4L-26 PG-TDSON-8 4N06L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one channel active ID T C=25 °C, V GS=10 V1) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage Power dissipation one channel active T C=100 °C, V GS=10 V2) I D,pulse - E AS I AS V GS I D=10A - P tot T C=
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