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®
OptiMOS
Power-Transistor
Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPG20N06S2L-35
Product Summary VDS RDS(on),max4) ID
55 V 35 mW 20 A
PG-TDSON-8
Type IPG20N06S2L-35
Package PG-TDSON-8
Marking 2N06L35
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active2)
ID
T C=25 °C, V GS=10 V1)
T C=100 °C, V GS=10 V
Pulsed drain current2) one channel active
Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source voltage
I D,pulse -
E AS I AS V GS
I D=10A -
Power dissipation one channel active
P tot
T C=25 °C
Operating and st