Datasheet4U Logo Datasheet4U.com

IPDQ65R008CM8 - 650V MOSFET

Description

1 Maximum ratings 3 T

Features

  • Best in class 650V SJ MOSFET performance.
  • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness.
  • Integrated fast body diode and ESD protection.
  • . XT interconnection technology for best in class thermal performance Benefits.
  • Ease of use and fast design‑in through low ringing tendency and usage across PFC and PWM stages.
  • Simplified thermal management due to our advanced die attach technique.
  • In.

📥 Download Datasheet

Datasheet preview – IPDQ65R008CM8

Datasheet Details

Part number IPDQ65R008CM8
Manufacturer Infineon
File Size 1.17 MB
Description 650V MOSFET
Datasheet download datasheet IPDQ65R008CM8 Datasheet
Additional preview pages of the IPDQ65R008CM8 datasheet.

📁 Similar Datasheet

Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
Public IPDQ65R008CM8 Final datasheet MOSFET 650V CoolMOS™ CM8 Power Transistor The CoolMOS™ 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 650V CoolMOS™ CM8 series is the successor to the 650V CoolMOS™ 7 Family and is enhancing Infineon’s WBG offering. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode (CFD) for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Published: |