• Part: IPDQ60R010S7A
  • Description: 600V SJ S7A Power MOSFET
  • Category: MOSFET
  • Manufacturer: Infineon
  • Size: 1.34 MB
Download IPDQ60R010S7A Datasheet PDF
Infineon
IPDQ60R010S7A
Features - Optimized for low switching frequency in high‑end applications (circuit breakers and diode paralleling/replacement in bridge rectifiers). - S7A technology enables best in class RDS(on) in smallest footprint. - Kelvin Source pin improves switching performance at high current. - QDPAK (PG‑HDSOP‑22‑1) package is MSL1 pliant, total Pb‑free, has easy visual inspection leads. Benefits - S7A enabling low RDS(on) for high constant current. - Increased performance by using MOSFET instead of diode in the application (e.g. synchronous rectification). - S7A can reach 10mΩ in QDPAK 315mm2 footprint. - Reduced parasitic source inductance by Kelvin Source improves stability for extreme high current handling and ease of use due to less ringing. - Improved thermals enable SMD QDPAK package to be used in high current designs. Potential applications ​Circuit breakers (HV Battery disconnect switch, DC and AC low frequency switch, HV E‑fuse) and diode paralleling/replacement for high power...