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IMZA120R078M2H - 1200V SiC MOSFET

Description

1 drain 2 source 3 Kelvin sense contact 4 gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction Copyright © Infineon Techn Type IMZA120R078M2H Package PG-TO247-4-U02 Marking 12M2H078 Datasheet www.infineon.com

Features

  • VDSS = 1200 V at Tvj = 25°C.
  • IDDC = 20 A at TC = 100°C.
  • RDS(on) = 78 mΩ at VGS = 18 V, Tvj = 25°C.
  • Very low switching losses.
  • Overload operation up to Tvj = 200°C.
  • Short circuit withstand time 2 µs.
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V.
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
  • Robust body diode for hard commutation.
  • . XT interconnection technology for best-in-.

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Full PDF Text Transcription

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IMZA120R078M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 20 A at TC = 100°C • RDS(on) = 78 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal performance • Suitable Infineon gate drivers can be found under https://www.infineon.
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