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IMZA120R022M2H
CoolSiC™ 1200 V SiC MOSFET G2
Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 57 A at TC = 100°C • RDS(on) = 22 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses
• Overload operation up to Tvj = 200°C • Short circuit withstand time 2 µs
• Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
• Robust body diode for hard commutation
• .XT interconnection technology for best-in-class thermal performance
• Suitable Infineon gate drivers can be found under https://www.infineon.
IMZA120R022M2H Datasheet
