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IMBG65R163M1H - MOSFET

Description

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Features

  • Optimized switching behavior at higher currents.
  • Commutation robust fast body diode with low Qf.
  • Superior gate oxide reliability.
  • Tj,max=175°C and excellent thermal behavior.
  • Lower RDS(on) and pulse current dependency on temperature.
  • Increased avalanche capability.
  • Compatible with standard drivers (recommended driving voltage: 0V-18V).
  • Kelvin source provides up to 4 times lower switching losses Benefits.
  • Unique com.

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Datasheet preview – IMBG65R163M1H

Datasheet Details

Part number IMBG65R163M1H
Manufacturer Infineon
File Size 1.50 MB
Description MOSFET
Datasheet download datasheet IMBG65R163M1H Datasheet
Additional preview pages of the IMBG65R163M1H datasheet.

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Full PDF Text Transcription

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IMBG65R163M1H MOSFET 650VCoolSiCªM1SiCTrenchPowerDevice The650VCoolSiC™isbuiltoverthesolidsiliconcarbidetechnology developedinInfineoninmorethan20years.Leveragingthewidebandgap SiCmaterialcharacteristics,the650VCoolSiC™MOSFEToffersaunique combinationofperformance,reliabilityandeaseofuse.Suitableforhigh temperatureandharshoperations,itenablesthesimplifiedandcost effectivedeploymentofthehighestsystemefficiency.
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