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IMBG120R045M1H - 1200V SiC Trench MOSFET

Key Features

  • Very low switching losses.
  • Short circuit withstand time 3 µs.
  • Fully controllable dV/dt.
  • Benchmark gate threshold voltage, VGS(th) = 4.5V.
  • Robust against parasitic turn on, 0V turn-off gate voltage can be applied.
  • Robust body diode for hard commutation.
  • . XT interconnection technology for best-in-class thermal performance.
  • Package creepage and clearance distance > 6.1mm.
  • Sense pin for optimized switching performance.

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IMBG120R045M1H IMBG120R045M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features • Very low switching losses • Short circuit withstand time 3 µs • Fully controllable dV/dt • Benchmark gate threshold voltage, VGS(th) = 4.5V • Robust against parasitic turn on, 0V turn-off gate voltage can be applied • Robust body diode for hard commutation • .XT interconnection technology for best-in-class thermal performance • Package creepage and clearance distance > 6.