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IMBG120R060M1H - 1200V SiC Trench MOSFET

Features

  • Very low switching losses.
  • Short circuit withstand time 3 µs.
  • Fully controllable dV/dt.
  • Benchmark gate threshold voltage, VGS(th) = 4.5V.
  • Robust against parasitic turn on, 0V turn-off gate voltage can be applied.
  • Robust body diode for hard commutation.
  • . XT interconnection technology for best-in-class thermal performance.
  • Package creepage and clearance distance > 6.1mm.
  • Sense pin for optimized switching performance Benefits.
  • Efficiency improvemen.

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Full PDF Text Transcription

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IMBG120R060M1H IMBG120R060M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features  Very low switching losses  Short circuit withstand time 3 µs  Fully controllable dV/dt  Benchmark gate threshold voltage, VGS(th) = 4.5V  Robust against parasitic turn on, 0V turn-off gate voltage can be applied  Robust body diode for hard commutation  .XT interconnection technology for best-in-class thermal performance  Package creepage and clearance distance > 6.
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