IKY75N120CH3 - IGBT

Description

Features

High speed H3 technology offers:.
Ultra-low loss switching losses thanks to Kelvin emitter pin package in combination with High speed H3 technology.
High efficiency in hard switching and resonant topologies.
10µsec short circuit withstand time at Tvj=175°C.
Easy paralleling capability due to positive temperature coefficient in VCE(sat).
Low EMI.
Low Gate Charge QG.
Very soft, fast recovery full current anti-parallel diode.

Infineon

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Datasheet Details

Part number	IKY75N120CH3
Manufacturer	Infineon
File Size	1.54 MB
Description	IGBT
Datasheet	IKY75N120CH3 Datasheet
Additional preview pages of the IKY75N120CH3 datasheet.

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Full PDF Text Transcription

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IKY75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelEmitterControlleddiode Features: HighspeedH3technologyoffers: •Ultra-lowlossswitchinglossesthankstoKelvinemitterpin packageincombinationwithHighspeedH3technology •Highefficiencyinhardswitchingandresonanttopologies •10µsecshortcircuitwithstandtimeatTvj=175°C •Easyparallelingcapabilityduetopositivetemperature coefficientinVCE(sat) •LowEMI •LowGateChargeQG •Verysoft,fastrecoveryfullcurrentanti-paralleldiode •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Apr 13, 2020 |