IKY150N65EH7 - High speed and low saturation voltage 650V IGBT7

Description

Type IKY150N65EH7 Package PG-TO247-4-PLUS-NN5.1 Marking K150EEH7 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2023-11-15 IKY150N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Tab

Features

VCE = 650 V.
IC = 150 A.
Low switching losses.
Very low collector-emitter saturation voltage VCEsat.
Very soft, fast recovery antiparallel diode.
Smooth switching behavior.
Humidity robustness.
Optimized for hard switching, two- and three-level topologies.
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ Potential.

Infineon

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Datasheet Details

Part number	IKY150N65EH7
Manufacturer	Infineon
File Size	1.95 MB
Description	High speed and low saturation voltage 650V IGBT7
Datasheet	IKY150N65EH7 Datasheet
Additional preview pages of the IKY150N65EH7 datasheet.

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IKY150N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Final datasheet High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology copacked with soft, fast recovery Emitter Controlled 7 diode TO-247PLUS – 4Pin Features • VCE = 650 V • IC = 150 A • Low switching losses • Very low collector-emitter saturation voltage VCEsat • Very soft, fast recovery antiparallel diode • Smooth switching behavior • Humidity robustness • Optimized for hard switching, two- and three-level topologies • Complete product spectrum and PSpice Models: http://www.infineon.

Published: May 14, 2025 |