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IKQ75N120CH3 - IGBT

Description

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Features

  • C High speed H3 technology offers:.
  • High efficiency in hard switching and resonant topologies.
  • 10µsec short circuit withstand time at Tvj=175°C.
  • Easy paralleling capability due to positive temperature coefficient in VCEsat.
  • Low EMI.
  • Low Gate Charge QG.
  • Very soft, fast recovery full current anti-parallel diode.
  • Maximum junction temperature Tvjmax=175°C.
  • Pb-free lead plating; RoHS compliant.
  • Complete product spectr.

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Full PDF Text Transcription

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IKQ75N120CH3 HighspeedswitchingseriesthirdgenerationIGBT LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelEmitterControlleddiode  Features: C HighspeedH3technologyoffers: •Highefficiencyinhardswitchingandresonanttopologies •10µsecshortcircuitwithstandtimeatTvj=175°C •Easyparallelingcapabilityduetopositivetemperature coefficientinVCEsat •LowEMI •LowGateChargeQG •Verysoft,fastrecoveryfullcurrentanti-paralleldiode •MaximumjunctiontemperatureTvjmax=175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.
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