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IKQ100N60T - IGBT

Description

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Features

  • C.
  • Very low VCE(sat) 1.5 V (typ. ).
  • Maximum junction temperature 175°C.
  • Short circuit withstand time 5µs.

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Datasheet preview – IKQ100N60T

Datasheet Details

Part number IKQ100N60T
Manufacturer Infineon
File Size 2.11 MB
Description IGBT
Datasheet download datasheet IKQ100N60T Datasheet
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Full PDF Text Transcription

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IGBT LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryanti-parallelEmitterControlleddiode IKQ100N60T 600Vlowlossswitchingseriesthirdgeneration Datasheet IndustrialPowerControl TRENCHSTOPTMseries IKQ100N60T LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnology withsoft,fastrecoveryanti-parallelEmitterControlleddiode  Features: C •VerylowVCE(sat)1.5V(typ.
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