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IHW25N140R5L - IGBT

General Description

TO-247 3Pin 2021-10-27 restricted C Type IHW25N140R5L G E Package PG-TO247-3-STD-NN2.5 Marking H25QR5L Copyright © Infineon T Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2023-05-19 IHW25N140R5L

Key Features

  • VCE = 1400 V.
  • IC = 25 A.
  • Powerful monolithic body diode with low forward voltage designed for soft commutation only.
  • Very tight parameter distribution.
  • High ruggedness, temperature stable behavior.
  • Very low VCEsat.
  • Easy paralleling capability due to positive temperature coefficient in VCEsat.
  • Low EMI.
  • Qualified according to JESD-022 for target.

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IHW25N140R5L Reverse-Conducting IGBT Reverse-Conducting IGBT with monolithic body diode Features • VCE = 1400 V • IC = 25 A • Powerful monolithic body diode with low forward voltage designed for soft commutation only • Very tight parameter distribution • High ruggedness, temperature stable behavior • Very low VCEsat • Easy paralleling capability due to positive temperature coefficient in VCEsat • Low EMI • Qualified according to JESD-022 for target applications • Pb-free lead plating; RoHS compliant • Halogen free (according to IEC 61249-2-21) • Complete product spectrum and PSpice Models: http://www.infineon.