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IHW20N135R5 - IGBT

General Description

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Key Features

  • Offers high breakdown voltage of 1350V for improved reliability.
  • Powerful monolithic body diode with low forward voltage designed for soft commutation only.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IHW20N135R5 ResonantSwitchingSeries ReverseConductingIGBTwithmonolithicbodydiode  Features: •Offershighbreakdownvoltageof1350Vforimprovedreliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly •TRENCHSTOPTMtechnologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowVCEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinVCEsat •LowEMI •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogenfree(accordingtoIEC61249-2-21) •CompleteproductspectrumandPSpiceModels: http://www.infineon.