IGW75N65H5 - IGBT

Description

Features

High speed H5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low QG.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IGW75N65H5
Manufacturer	Infineon
File Size	1.72 MB
Description	IGBT
Datasheet	IGW75N65H5 Datasheet

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Full PDF Text Transcription

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IGW75N65H5 Highspeedseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Mar 3, 2016 |