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IGW30N60F - MOSFET

Description

Using advanced IGBT technology, the 600V IGBT.

Offers superior conduction and switching performances.

Features

  • Low saturation voltage: VCE(sat),typ=2.0V @IC=30A,VGE=15V;.
  • RoHS Compliant;.

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Datasheet Details

Part number IGW30N60F
Manufacturer IPS
File Size 0.98 MB
Description MOSFET
Datasheet download datasheet IGW30N60F Datasheet

Full PDF Text Transcription

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IGW30N60F General Description: Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Package and Finish VCES 600V VCE(sat) 2.0V IC 30A Features: ●Low saturation voltage: VCE(sat),typ=2.
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