Datasheet4U Logo Datasheet4U.com

IGW60N60F - MOSFET

Description

Using advanced IGBT technology, the 600V IGBT.

Offers superior conduction and switching performances.

Features

  • Low saturation voltage: VCE(sat),typ=2.2V @IC=60A,VGE=15V;.
  • RoHS Compliant;.

📥 Download Datasheet

Datasheet Details

Part number IGW60N60F
Manufacturer IPS
File Size 0.98 MB
Description MOSFET
Datasheet download datasheet IGW60N60F Datasheet

Full PDF Text Transcription

Click to expand full text
IGW60N60F General Description: Using advanced IGBT technology, the 600V IGBT. Offers superior conduction and switching performances. Lead Free Package and Finish VCES 600V VCE(sat) 2.2V IC 60A Features: ●Low saturation voltage: VCE(sat),typ=2.
Published: |