IGW50N65F5A - IGBT

Description

Features

High speed F5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
650V breakdown voltage.
Low gate charge QG.
Maximum junction temperature 175°C.
Qualified according to AEC-Q101.
Green package (RoHS compliant).
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ G C E.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IGW50N65F5A
Manufacturer	Infineon
File Size	1.90 MB
Description	IGBT
Datasheet	IGW50N65F5A Datasheet

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Full PDF Text Transcription

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IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technology IGW50N65F5A 650VIGBT Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGW50N65F5A Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Feb 17, 2016 |