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IGW50N65H5A - IGBT

Description

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Features

  • High speed H5 technology offering.
  • Best-in-Class efficiency in hard switching and resonant topologies.
  • Plug and play replacement of previous generation IGBTs.
  • 650V breakdown voltage.
  • Low gate charge QG.
  • Maximum junction temperature 175°C.
  • Qualified according to AEC-Q101.
  • Green package (RoHS compliant).
  • Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/.

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Full PDF Text Transcription

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IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technology IGW50N65H5A 650VIGBT Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGW50N65H5A Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technology  FeaturesandBenefits: HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://www.infineon.
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