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IDK10G120C5 Datasheet Schottky Diode

Manufacturer: Infineon

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General Description

 System efficiency improvement over Si diodes  Enabling higher frequency / increased power density solutions  System size/cost savings due to reduced heatsink requirements and smaller magnetics  Reduced EMI  Highest efficiency across the entire load range  Robust diode operation during surge events  High reliability  Related Links: www.infineon.com/SiC CASE Key performance parameters Type IDK10G120C5 VDC 1200 V IF 10 A QC 41nC Tvj,max 175°C Marking D1012C5 Package PG-TO263-2 Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com page 1 of 12 V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Table of contents Table of contents

Overview

IDK10G120C5 IGC13R65U8W2 IGC13R65U8W2 IGC13R65U8W2 IIGGCC51133thRR66G55eUUn88WWer22ation CoolSiCTM 1200V Schottky Diode SiC.

Key Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • No reverse recovery current / no forward recovery.
  • Temperature independent switching behaviour.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Excellent thermal performance 1 2.
  • Extended surge current capability.
  • Specified dv/dt ruggedness.
  • Pb-free lead plating; RoHS compliant Potential.

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