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IDK08G120C5 Datasheet 1200V Schottky Diode

Manufacturer: Infineon

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General Description

 System efficiency improvement over Si diodes  Enabling higher frequency / increased power density solutions  System size/cost savings due to reduced heatsink requirements and smaller magnetics  Reduced EMI  Highest efficiency across the entire load range  Robust diode operation during surge events  High reliability  Related Links: www.infineon.com/SiC CASE Key performance parameters Type IDK08G120C5 VDC IF 1200 V 8 A QC 28nC Tvj,max 175°C Marking D8512C5 Package PG-TO263-2 Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com page 1 of 12 V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Table of contents Table of contents

Overview

IDK08G120C5 IGC13R65U8W2 IGC13R65U8W2 IGC13R65U8W2 IGC513thR6G5eUn8Wer2ation CoolSiCTM 1200V Schottky Diode IGC13R65U8W2 SiC.

Key Features

  • Revolutionary semiconductor material - Silicon Carbide.
  • No reverse recovery current / no forward recovery.
  • Temperature independent switching behaviour.
  • Low forward voltage even at high operating temperature.
  • Tight forward voltage distribution.
  • Excellent thermal performance 1 2.
  • Extended surge current capability.
  • Specified dv/dt ruggedness.
  • Pb-free lead plating; RoHS compliant Potential.

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