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IAUMN10S5N016G - Automotive MOSFET

Description

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Features

  • OptiMOS™ power MOSFET for automotive.

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Full PDF Text Transcription

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IAUMN10S5N016G Automotive MOSFET OptiMOS™ 5 Power-Transistor Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL2 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested Potential applications General automotive applications. Product validation Qualified for automotive applications. Product validation according to AEC-Q101. Product Summary VDS RDS(on) ID (chip limited) Type IAUMN10S5N016G 100 V 1.6 mΩ 310 A Package PG-HSOG-4-1 PG-HSOG-4-1 Insert image TAB 1234 Marking 5N10N016 Data Sheet Please read the Important Notice and Warnings at the end of this document www.infineon.com/mosfets Rev. 1.
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