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IAUMN04S7N005G - Automotive MOSFET

Description

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Features

  • OptiMOSTM power MOSFET for automotive.

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Full PDF Text Transcription

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IAUMN04S7N005G Automotive MOSFET OptiMOSTM 7 Power-Transistor Features • OptiMOSTM power MOSFET for automotive applications • N-channel - Enhancement mode - Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL2 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested Potential Applications General automotive applications. Product Validation Qualified for automotive applications. Product validation according to AEC-Q101. Product Summary VDS RDS(on) ID (chip limited) 40 V 0.50 mΩ 660 A Type IAUMN04S7N005G Package PG-HSOG-4-1 PG-HSOG-4-1 Marking 7N04N005 Data Sheet Please read the Important Notice and Warnings at the end of this document www.infineon.com/mosfets Rev. 1.
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