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BSO612CVG - Small-Signal-Transistor

Download the BSO612CVG datasheet PDF. This datasheet also covers the BSO612CV variant, as both devices belong to the same small-signal-transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Dual N- and P -Channel.
  • Enhancement mode.
  • Avalanche rated Drain source voltage Drain-Source on-state resistance Continuous drain current.
  • Pb-free lead plating;RoHS compliant VDS RDS(on) ID N 60 0.12 3 P -60 V 0.3 W -2 A Type Package Marking BSO 612 CV PG-DSO-8 612CV Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current TA = 25 °C Avalanche energy, single pulse WID = 3 A, VD.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BSO612CV_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Full PDF Text Transcription

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Rev. 2.1 BSO 612 CV G SIPMOS® Small-Signal-Transistor Product Summary Features · Dual N- and P -Channel · Enhancement mode · Avalanche rated Drain source voltage Drain-Source on-state resistance Continuous drain current · Pb-free lead plating;RoHS compliant VDS RDS(on) ID N 60 0.12 3 P -60 V 0.
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