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Preliminary data
SIPMOS® Small-Signal-Transistor Features
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BSO613SPV
Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
S S S G 1 2 3 4 Top View 8 7 6 5
P-Channel Enhancement mode Avalanche rated dv/dt rated
VDS RDS(on) ID
D D D D
-60 0.13 -3.44
V
W
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A
SIS00062
Type BSO613SPV
Package SO 8
Ordering Code Q67042-S4021
Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current
Value -3.44 -13.8 150 0.25 6
Unit A
ID ID puls EAS EAR
dv/dt
T A = 25 °C
Pulsed drain current
T A = 25 °C
Avalanche energy, single pulse mJ
I D = -3.44 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
kV/µs
I S = -3.
BSO613SPV Datasheet
