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BSC067N06LS3G - Power-MOSFET

Features

  • Ideal for high frequency switching and sync. rec.
  • Optimized technology for DC/DC converters.
  • Excellent gate charge x R DS(on) product (FOM).
  • Very low on-resistance RDS(on).
  • Superior thermal resistance.
  • N-channel, logic level.
  • 100% avalanche tested.
  • Pb-free plating; RoHS compliant.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Type OptiMOSTM3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • N-channel, logic level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type BSC067N06LS3 G BSC067N06LS3 G Product Summary VDS RDS(on),max ID 60 V 6.7 mW 50 A Package PG-TDSON-8 Marking 067N06LS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C Value 50 50 Unit A V GS=4.5 V, T C=25 °C V GS=4.
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