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BSC060P03NS3E - Power-MOSFET

Download the BSC060P03NS3E datasheet PDF. This datasheet also covers the BSC060P03NS3EG variant, as both devices belong to the same power-mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • single P-Channel in SuperSO8.
  • Qualified according JEDEC1) for target.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BSC060P03NS3EG-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Infineon

Part Number Description
BSC060P03NS3EG Power-MOSFET
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BSC060N10NS3G Power-MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
OptiMOSTM P3 Power-Transistor Features • single P-Channel in SuperSO8 • Qualified according JEDEC1) for target applications • 150 °C operating temperature • 100% Avalanche rated • V GS=25 V, specially suited for notebook applications • ESD protected • Pb-free; RoHS compliant • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 BSC060P03NS3E G Product Summary V DS R DS(on),max ID -30 V 6.
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