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BSC066N06NS - 60V MOSFET

Description

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Features

  • Optimized for high performance SMPS, e. g. sync. rec.
  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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Full PDF Text Transcription

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BSC066N06NS MOSFET OptiMOSTMPower-Transistor,60V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 6.6 mΩ ID 64 A QOSS 19 nC QG(0V..10V) 17 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC066N06NS Package PG-TDSON-8 Marking 066N06NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2019-11-13 OptiMOSTMPower-Transistor,60V BSC066N06NS TableofContents Description . . . . . . . . . . . . . . .
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