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BSC059N04LS6
MOSFET
OptiMOSTM6Power-Transistor,40V
Features
•Optimizedforsynchronousapplication •Verylowon-resistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •175°Crated ProductValidation Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof JEDEC47/20/22
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
5.9
mΩ
ID
59
A
Qoss
10.2
nC
QG(0V..10V)
9.4
nC
QG(0V..4.5V)
4.