BSC0500NSI - MOSFET

Description

Features

Optimized for high performance buck converters.
Monolithic integrated Schottky-like diode.
Very low on-resistance RDS(on) @ VGS=4.5 V.
100% avalanche tested.
N-channel.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	BSC0500NSI
Manufacturer	Infineon
File Size	1.25 MB
Description	MOSFET
Datasheet	BSC0500NSI Datasheet

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Full PDF Text Transcription

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BSC0500NSI MOSFET OptiMOSTM5Power-MOSFET,30V Features •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 1.3 mΩ ID 186 A QOSS 27 nC QG(0V..4.5V) 18 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC0500NSI Package PG-TDSON-8 Marking 0500NSI RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.

Published: Feb 23, 2016 |