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BSC057N03MS G
OptiMOS™3 M-Series Power-MOSFET
Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100% avalanche tested • N-channel • Very low on-resistance R DS(on) @ V GS=4.5 V • Excellent gate charge x R DS(on) product (FOM) • Qualified according to JEDEC1) for target applications • Superior thermal resistance • Pb-free plating; RoHS compliant
Product Summary
VDS RDS(on),max
ID
VGS=10 V VGS=4.5 V
30 5.7 7.
BSC057N03MSG Datasheet
