BSC050NE2LS - n-Channel Power MOSFET

Description

Features

Optimized for high performance Buck converter.
Very low on-resistance RDS(on) @ VGS=4.5 V.
100% avalanche tested.
Superior thermal resistance.
N-channel.
Qualified according to JEDEC1) for target.

Infineon

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Datasheet Details

Part number	BSC050NE2LS
Manufacturer	Infineon
File Size	1.28 MB
Description	n-Channel Power MOSFET
Datasheet	BSC050NE2LS Datasheet

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Full PDF Text Transcription

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BSC050NE2LS MOSFET OptiMOSTMPower-MOSFET,25V Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 5.0 mΩ ID 58 A QGD 1.3 nC QG(0V..10V) 10.4 nC SuperSO8 8 7 65 56 78 1 23 4 4321 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC050NE2LS Package PG-TDSON-8 Marking 050NE2LS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.

Published: Feb 23, 2016 |