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BFY450 - HiRel NPN Silicon RF Transistor

Description

ESD: Electrostatic discharge sensitive device, observe handling precautions!

Features

  • 4.
  • For Medium Power Amplifiers.
  • Compression point P-1dB = 19 dBm at 1.8 GHz Max. available gain Gma = 16dB at 1.8 GHz.
  • Hermetically sealed microwave package 1.
  • Transition Frequency fT = 20 GHz.
  • SIEGET25-Line Infineon Technologies Grounded Emitter Transistor25 GHz fT-Line Product validation.
  • Space Qualified ESCC Detail Spec. No. : 5611/008 Type Variant No. 03.

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Datasheet Details

Part number BFY450
Manufacturer Infineon
File Size 359.50 KB
Description HiRel NPN Silicon RF Transistor
Datasheet download datasheet BFY450 Datasheet

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Full PDF Text Transcription

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BFY450 HiRel NPN Silicon RF Transistor BFY450(ES) Features 4  For Medium Power Amplifiers  Compression point P-1dB = 19 dBm at 1.8 GHz Max. available gain Gma = 16dB at 1.8 GHz  Hermetically sealed microwave package 1  Transition Frequency fT = 20 GHz  SIEGET25-Line Infineon Technologies Grounded Emitter Transistor25 GHz fT-Line Product validation  Space Qualified ESCC Detail Spec. No.: 5611/008 Type Variant No. 03 Description ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type Comment Pin Configuration 1 2 3 4 BFY450(ES) BFY450(P)1 For flight use C E B E Not for flight use1 1 (P) parts have the same fit, form and function as (ES) parts, no screening acc.
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