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2ED28073J06F - half-bridge gate driver

Description

The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels.

Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction.

Features

  • Product summary.
  • Negative VS transient immunity of 70 V, dV/dt immune.
  • Lower di/dt gate driver for better noise immunity.
  • Floating channel designed for bootstrap operation.
  • Operating voltages (VS node) upto + 600 V.
  • Maximum bootstrap voltage (VB node) of + 625 V.
  • Integrated bootstrap diode.
  • Integrated shoot-through protection with built-in dead time.
  • Integrated short pulse / noise rejection filter on input.
  • Independent under voltage lockout for both.

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Full PDF Text Transcription

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2ED28073J06F 2ED28073J06F 600 V half-bridge gate driver with integrated bootstrap diode Features Product summary  Negative VS transient immunity of 70 V, dV/dt immune  Lower di/dt gate driver for better noise immunity  Floating channel designed for bootstrap operation  Operating voltages (VS node) upto + 600 V  Maximum bootstrap voltage (VB node) of + 625 V  Integrated bootstrap diode  Integrated shoot-through protection with built-in dead time  Integrated short pulse / noise rejection filter on input  Independent under voltage lockout for both high and low side  Schmitt trigger inputs with hysteresis  3.
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