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Final data
SPW12N50C3
VDS @ Tjmax RDS(on) ID 560 0.38 11.6
P-TO247
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
V Ω A
Type SPW12N50C3
Package P-TO247
Ordering Code Q67040-S4580
Marking 12N50C3
Maximum Ratings Parameter Symbol ID Value Unit
Continuous drain current
TC = 25 °C TC = 100 °C
A 11.6 7
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
I D = 5.5 A, VDD = 50 V
I D puls EAS
34.8 340 0.6 11.6 6 ±20
±30
mJ
Avalanche energy, repetitive tAR limited by Tjmax1) EAR
I D = 11.6 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt
IS=11.
SPW12N50C3 Datasheet
