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Final data
SPW11N60C3
VDS @ Tjmax RDS(on) ID 650 0.38 11
P-TO247
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance
V Ω A
Type SPW11N60C3
Package P-TO247
Ordering Code Q67040-S4418
Marking 11N60C3
Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 5.5 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 11 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Reverse diode dv/dt dv/dt
IS=11A, VDS=480V, T j=125°C
Symbol ID
Value 11 7
Unit A
I D puls EAS
33 340 0.
SPW11N60C3 Datasheet
