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Preliminary data
SPP08P06P SPB08P06P
SIPMOS ® Power-Transistor
Features
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Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current
P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature
VDS RDS(on) ID
-60 0.3 -8.8
V
W
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· · ·
A
Type SPP08P06P SPB08P06P
Package
Ordering Code
Pin 1 G
PIN 2/4 D
PIN 3 S
P-TO220-3-1 Q67040-S4729 P-TO263-3-2 Q67040-S4233
Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current
Value -8.8 -6.2
Unit A
ID
T C = 25 °C T C = 100 °C
Pulsed drain current
ID puls EAS EAR
dv/dt
-35.2 70 4.2 6 kV/µs mJ
T C = 25 °C
Avalanche energy, single pulse
I D = -8.
SPP08P06P Datasheet
