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SPP07N60S5 - Power Transistor

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP07N60S5 SPI07N60S5 VDS RDS(on) ID 600 V 0.6 Ω 7.3 A PG-TO262 PG-TO220 2 P-TO220-3-1 23 1 Type SPP07N60S5 SPI07N60S5 Package PG-TO220 PG-TO262 Ordering Code Q67040-S4172 Q67040-S4328 Marking 07N60S5 07N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = - A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 7.
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