Datasheet4U Logo Datasheet4U.com

SPB80N06S2-09 - OptiMOS Power-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SPP80N06S2-09 SPB80N06S2-09 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID P- TO263 -3-2 55 9.1 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N06S2-09 SPB80N06S2-09 Package P- TO220 -3-1 P- TO263 -3-2 Ordering Code Q67060-S6025 Q67060-S6027 Marking 2N0609 2N0609 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 70 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 320 370 19 6 ±20 190 -55...