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SPB35N10 - SIPMOS Power-Transistor

General Description

and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

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Datasheet Details

Part number SPB35N10
Manufacturer Infineon
File Size 480.71 KB
Description SIPMOS Power-Transistor
Datasheet download datasheet SPB35N10 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary data SPI35N10 SPP35N10,SPB35N10 SIPMOS Power-Transistor Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 44 35 P-TO220-3-1 V A m Type SPP35N10 SPB35N10 SPI35N10 Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4123 Q67042-S4103 Q67042-S4124 Marking 35N10 35N10 35N10 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 35 26.4 Unit A Pulsed drain current TC=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 140 245 6 ±20 150 -55...