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SPB-3018 - Medium Power Active Bias InGaP/GaAs HBT Amplifier

Description

The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar Transistor (HBT) amplifier RFIC.

This amplifier incorporates an on-chip Class AB bias circuit which provides excellent efficiency while maintaining good linearity.

Features

  • Efficiency Available in Lead Free, RoHS compliant, & Green packaging Efficient Class AB operation P1dB = 30 dBm @ 1960MHz High Linearity/ACP performance Robust 1000V ESD, Class 1C MSL 1 moisture rating Power shutdown using VPC (less than 5uA IDQ) 15 12.5 10 7.5 5 2.5 0 15 16 17 18 19 20 21 22 23 24 ACP -50 -55 -60 -65 -70 -75.

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Datasheet Details

Part number SPB-3018
Manufacturer Sirenza Microdevices
File Size 232.11 KB
Description Medium Power Active Bias InGaP/GaAs HBT Amplifier
Datasheet download datasheet SPB-3018 Datasheet

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Full PDF Text Transcription

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Preliminary Product Description The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar Transistor (HBT) amplifier RFIC. This amplifier incorporates an on-chip Class AB bias circuit which provides excellent efficiency while maintaining good linearity. The on-chip bias also allows the device output power (and current) to drive up towards saturation as the input power increases. The SPB-3018 is an ideal choice for multi-carrier as well as digital wireless telecom or general wireless applications in the 400-2500 MHz range. This amplifier is a robust, reliable, and rugged part with Class 1C HBM ESD rating, low operating junction temperature (Tj<125 ºC at 85 ºC lead), and excellent moisture resistance (MSL 1).
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