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SIGC81T60NC - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 600V NPT technology.
  • 100µm chip.
  • short circuit prove.
  • positive temperature coefficient.
  • easy paralleling C This chip is used for:.
  • IGBT-Modules.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SIGC81T60NC IGBT Chip in NPT-technology FEATURES: • 600V NPT technology • 100µm chip • short circuit prove • positive temperature coefficient • easy paralleling C This chip is used for: • IGBT-Modules Applications: • drives G E Chip Type SIGC81T60NC VCE 600V ICn 100A Die Size 8.99 x 8.99 mm2 Package sawn on foil Ordering Code Q67041-A4694A001 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 8.99 x 8.99 80.82 / 72.6 8x( 1.77x2.82 ) 0.78 x 1.
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