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SIGC81T120R2CL - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG, Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 2002 All Rights

Features

  • 1200V NPT technology 180µm chip.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling.
  • integrated gate resistor This chip is used for:.
  • power module BSM50GD120DLC.

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com SIGC81T120R2CL IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • power module BSM50GD120DLC Applications: • drives C G E Chip Type VCE ICn 50A Die Size 9.08 X 8.98 mm2 Package sawn on foil Ordering Code Q67041A4700-A001 SIGC81T120R2CL 1200V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 9.08 X 8.98 8 x ( 2.6 x 1.78 ) 1.46 x 0.8 81.5 / 63.
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