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SIGC223T120R2CS - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld tbd Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999

Features

  • 1200V NPT technology 175µm chip.
  • low turn-off losses.
  • short tail current.
  • positive temperature coefficient.
  • easy paralleling.
  • integrated gate resistor This chip is used for:.
  • IGBT Modules.

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Full PDF Text Transcription

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www.DataSheet4U.com Preliminary SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications C G E Chip Type VCE ICn Die Size 14.4 x 15.5 mm2 Package sawn on foil Ordering Code tbd SIGC223T120R2CS 1200V 150A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 14.4 X 15.5 8x( 3.67x6.77 ) 1.49 x 1.51 223.
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