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SIGC25T120C - IGBT

Description

AQL 0,65 for visual inspection according to failure catalog Electrostatic Discharge Sensitive Device according to MIL-STD 883 Test-Normen Villach/Prüffeld Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All R

Features

  • 1200V NPT technology.
  • 200µm chip.
  • positive temperature coefficient.
  • easy paralleling This chip is used for:.
  • BUP 213 C.

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Full PDF Text Transcription

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www.DataSheet4U.com Preliminary SIGC25T120C IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology • 200µm chip • positive temperature coefficient • easy paralleling This chip is used for: • BUP 213 C Applications: • drives G E Chip Type SIGC25T120C VCE 1200V ICn 15A Die Size 5.71 x 4.53 mm2 Package Ordering Code C67078-A4674sawn on foil A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 5.71 x 4.53 2 x ( 2.18 x 1.6 ) 1.09 x 0.68 25.9 / 18.
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