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Type
IPD050N03L G IPS050N03L G
IPF050N03L G IPU050N03L G
OptiMOS®3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating; RoHS compliant Type IPD050N03L G IPF050N03L G
1)
Product Summary V DS R DS(on),max ID 30 5 50 V mΩ A
IPS050N03L G
IPU050N03L G
Package Marking
PG-TO252-3-11 050N03L
PG-TO252-3-23 050N03L
PG-TO251-3-11 050N03L
PG-TO251-3-21 050N03L
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.