IPF021N13NM6 - MOSFET

Datasheet Summary

Description

Features

N-channel, normal level.
Very low on-resistance RDS(on).
Excellent gate charge x RDS(on) product (FOM).
Very low reverse recovery charge (Qrr).
100% avalanche tested.
175°C operating temperature.
Optimized for motor drives and battery powered.

Infineon

📥 Download Datasheet

Datasheet Details

Part number	IPF021N13NM6
Manufacturer	Infineon
File Size	1.04 MB
Description	MOSFET
Datasheet	IPF021N13NM6 Datasheet
Additional preview pages of the IPF021N13NM6 datasheet.

📁 Similar Datasheet

IPF050N03L - Fast switching MOSFET (Infineon Technologies)
IPF050N03LG - Power-Transistor (Infineon Technologies)
IPF05N03LA - OptiMOS 2 Power-Transistor (Infineon Technologies AG)
IPF060N03LG - Power-Transistor (Infineon Technologies)
IPF06N03LA - OptiMOS 2 Power-Transistor (Infineon Technologies AG)
IPF09N03LA - Power Transistor (Infineon Technologies AG)
IPF12N03LBG - Power-Transistor (Infineon Technologies)
IPF13N03LA - OptiMOS 2 Power-Transistor (Infineon Technologies AG)
IPFH6N03LAG - Power-Transistor (Infineon Technologies)

Other Datasheets by Infineon

IPF024N10NF2S - MOSFET
IPF009N04NF2S - MOSFET
IPF013N04NF2S - 40V MOSFET
IPF014N08NF2S - MOSFET
IPF016N06NF2S - MOSFET
IPF017N08NF2S - MOSFET
IPF018N10NM5LF2 - 100V Linear FET
IPF019N12NM6 - MOSFET

Full PDF Text Transcription

Click to expand full text

IPF021N13NM6 MOSFET OptiMOSTM6Power-Transistor,135V Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •100%avalanchetested •175°Coperatingtemperature •Optimizedformotordrivesandbatterypoweredapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedaccordingtoJ-STD-020 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 135 V RDS(on),max 2.

Published: Apr 1, 2024 |