• Part: IDC05S60C
  • Description: 2nd generation thinQ! SiC Schottky Diode
  • Category: Diode
  • Manufacturer: Infineon
  • Size: 228.31 KB
Download IDC05S60C Datasheet PDF
Infineon
IDC05S60C
FEATURES : - - - - - - Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications: - SMPS, PFC, snubber Chip Type VBR 600V IF 5A Die Size 1.45 x 1.162 mm2 Package sawn on foil MECHANICAL PARAMETER: Raster size Anode pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Anode metalization Cathode metalization Die bond Wire bond Reject Ink Dot Size Remended Storage Environment . 1.45x 1.162 mm 1.213 x 0.925 1.68 / 1.22 355 75 0 2182 pcs Photoimide 3200 nm Al mm µm mm deg Data Sh ee 1400 nm Ni Ag - system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350µm ∅ ≥ 0.3 mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C . Edited by INFINEON Technologies, AIM PMD D CID...